SI4925DY |
RFQ for SI4925DY Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| SI4925DY | - | 2006 | 50000 |
These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Features |
| · -6 A, -30 V. RDS(ON) = 0.032 W @ VGS = -10 V,· RDS(ON) = 0.045 W @ VGS = -4.5 V.· Low gate charge (14.5nC typical).· High performance trench technology for extremely low· RDS(ON).· High power and current handling capability. |
| Symbol | Parameter | Si4925DY | Units |
| VDSS | Drain-Source Voltage | -30 | V |
| VGSS | Gate-Source Voltage | ±20 | V |
| ID | Drain Current - Continuous (Note 1a) - Pulsed |
-6 | A |
| -20 | |||
| PD | Power Dissipation for Dual Operation | 2 | W |
| Power Dissipation for Single Operation (Note 1a (Note 1b) (Note 1c) |
1 | ||
| 0.9 | |||
| TJ, Tstg | Operating and Storage Junction Temperature Range | -55 to +150 | °C |
| THERMAL CHARACTERISTICS | |||
| RJA | Thermal Resistance, Junction-to-Ambient (Note 1a) | 78 | °C/W |
| RJC | Thermal Resistance, Junction-to-Case (Note 1) | 40 | °C/W |
